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| BSM 200 GAL 120 DN2 IGBT Power Module * Single switch with chopper diode * Package with insulated metal base plate Type BSM 200 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package Ordering Code 1200V 290A HALFBRIDGE GAL 2B C67070-A2301-A70 Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 290 200 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 580 400 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 1400 W + 150 -55 ... + 150 0.09 0.125 2500 20 11 F 55 / 150 / 56 Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Diode thermal resistance, chip-case,chopper Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD RTHJCDC Vis - Semiconductor Group 1 Jun-13-1996 BSM 200 GAL 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3 12 6.5 3 3.7 V VGE = VCE, IC = 8 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 200 A, Tj = 25 C VGE = 15 V, IC = 200 A, Tj = 125 C Zero gate voltage collector current ICES 4 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 400 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 108 13 2 1 - S nF - VCE = 20 V, IC = 200 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jun-13-1996 BSM 200 GAL 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 110 220 ns VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Rise time tr 80 160 VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Turn-off delay time td(off) 550 800 VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Fall time tf 80 120 VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Free-Wheel Diode Diode forward voltage VF - V IF = 200 A, VGE = 0 V, Tj = 25 C IF = 200 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr - s IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s Tj = 25 C Tj = 125 C - Semiconductor Group 3 Jun-13-1996 BSM 200 GAL 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Chopper Diode Chopper diode forward voltage VFC 2.3 1.8 2.8 - V IFC = 300 A, VGE = 0 V, Tj = 25 C IFC = 300 A, VGE = 0 V, Tj = 125 C Reverse recovery time, chopper trrC 500 - ns IFC = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s, Tj = 25 C Reverse recovery charge, chopper QrrC C IFC = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s Tj = 25 C Tj = 125 C 14 40 - Semiconductor Group 4 Jun-13-1996 BSM 200 GAL 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g |
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